Imaging, Spectroscopic, High-Contrast, and Interferometric Instrumentation

Fabrication of 721-pixel silicon lens array of a microwave kinetic inductance detector camera

[+] Author Affiliations
Kenji Mitsui, Norio Okada, Kenichi Karatsu, Takashi Noguchi

Advanced Technology Center, National Astronomical Observatory of Japan, 2-21-1 Osawa, Mitaka, Tokyo 181-8588, Japan

Tom Nitta

Advanced Technology Center, National Astronomical Observatory of Japan, 2-21-1 Osawa, Mitaka, Tokyo 181-8588, Japan

University of Tsukuba, Department of Physics, Faculty of Pure and Applied Sciences, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan

JSPS Research Fellow, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan

Yutaro Sekimoto, Shigeyuki Sekiguchi, Masakazu Sekine

Advanced Technology Center, National Astronomical Observatory of Japan, 2-21-1 Osawa, Mitaka, Tokyo 181-8588, Japan

The University of Tokyo, School of Science, Department of Astronomy, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8654, Japan

J. Astron. Telesc. Instrum. Syst. 1(2), 025001 (Feb 18, 2015). doi:10.1117/1.JATIS.1.2.025001
History: Received July 30, 2014; Accepted January 14, 2015
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Abstract.  We have been developed a lens-integrated superconducting camera for millimeter and submillimeter astronomy. High-purity silicon (Si) is suitable for the lens array of the microwave kinetic inductance detector camera due to its high refractive index and low dielectric loss at low temperatures. The camera is an antenna-coupled Al coplanar waveguide on a Si substrate. Thus the lens and the device are made of the same material. We report a fabrication method of a 721-pixel Si lens array with an antireflection (AR) coating. The Si lens array was fabricated with an ultraprecision cutting machine. It uses TiAlN-coated carbide end mills attached with a high-speed spindle. The shape accuracy was less than 50μm peak-to-valley and the surface roughness was arithmetic average roughness (Ra) of 1.8μm. The mixed epoxy was used as an AR coating to adjust the refractive index. It was shaved to yield a thickness of 185μm for 220 GHz. Narrow grooves were made between the lenses to prevent cracking due to the different thermal expansion coefficients of Si and the epoxy. The surface roughness of the AR coating was Ra of 2.4 to 4.2μm.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Kenji Mitsui ; Tom Nitta ; Norio Okada ; Yutaro Sekimoto ; Kenichi Karatsu, et al.
"Fabrication of 721-pixel silicon lens array of a microwave kinetic inductance detector camera", J. Astron. Telesc. Instrum. Syst. 1(2), 025001 (Feb 18, 2015). ; http://dx.doi.org/10.1117/1.JATIS.1.2.025001


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