Some comparisons in the application of End-Hall and Cold Cathode ion sources in the conversion of SiO to SiO2

Ronald R. Willey

doi:10.1117/12.185787

7 September 1994 Some comparisons in the application of End-Hall and Cold Cathode ion sources in the conversion of SiO to SiO₂

Ronald R. Willey

Author Affiliations +

Proceedings Volume 2262, Optical Thin Films IV: New Developments; (1994) https://doi.org/10.1117/12.185787
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

Silicon dioxide has many desirable properties as a coating material for the visible and near IR spectrum. These include low index, high transmittance, good adhesion, and environmental durability. The deposition of the material from solid discs or granular forms using an electron beam gun tends to have a fluctuating angular distribution. This causes reproducibility problems in some critical optical coating processes. Silicon monoxide can be evaporated from a resistance source with a highly reproducible deposition pattern, but it does not have the low index and high transmittance required. We report on attempts to develop processes which convert the SiO to SiO₂ during deposition by the use of ion assisted deposition. The additional oxygen must be supplied in a sufficiently energetic process to provide the material conversion during or after the SiO deposition on the surface to be coated. The deposition rate (10 angstrom per second), the uniformity, and the repeatability of the processes must also be adequate for the production of the product at an economical rate. These experiments have been done with both an End-Hall and a Cold Cathode ion source. A comparison of the results and behavior observed with each type of ion source are reported along with recommended process parameters to be used with each.

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Ronald R. Willey "Some comparisons in the application of End-Hall and Cold Cathode ion sources in the conversion of SiO to SiO₂", Proc. SPIE 2262, Optical Thin Films IV: New Developments, (7 September 1994); https://doi.org/10.1117/12.185787

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