Lithographic implications for Cu/low-k integration

Rebecca D. Mih; Nora Chen; Kenneth R. Jantzen; James T. Marsh; Steven Schneider

doi:10.1117/12.354401

26 July 1999 Lithographic implications for Cu/low-k integration

Rebecca D. Mih, Nora Chen, Kenneth R. Jantzen, James T. Marsh, Steven Schneider

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354401
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Low dielectric constant materials in the back-end-of-line process are needed to reduce resistive-capacitive delays due to continually shrinking interconnect dimensions. Several organic dielectrics which have etch rates similar to photoresists, such as benzocyclobutene and diamond-like carbon, have been explored for compatibility with lithographic processes. In this paper we discuss integration issues from a lithographic perspective, including low-k materials selection and properties, integration sequences, use of hard masks and the effects on reflectivity, resist process compatibility and focus effects using an advanced DUV scanning system.

Citation Download Citation

Rebecca D. Mih, Nora Chen, Kenneth R. Jantzen, James T. Marsh, and Steven Schneider "Lithographic implications for Cu/low-k integration", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354401

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