Amorphous oxide thin-film devices for neuromorphic applications

Sungsik Lee

doi:10.1117/12.2612015

9 March 2022 Amorphous oxide thin-film devices for neuromorphic applications

Sungsik Lee

Proceedings Volume PC12024, Advances in Display Technologies XII; PC1202407 (2022) https://doi.org/10.1117/12.2612015
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

This talk covers thin-film devices based on amorphous oxide semiconductors (AOS) while discussing related physical mechanisms and potential applications, such as neuromorphic systems. Intentionally using a light-induced metastability mechanism of oxygen defects in AOSs, it is allowed to detect even visible lights, eluding to a persistent photoconductivity (PPC) as an optical memory action. So, this PPC phenomenon is naturally useful for AOS-based optical memory applications, e.g. optical synaptic transistors along with an electrical controllability of a recovery speed with gate pulse or bias. In this respect, AOSs can be promising materials for a low-cost transparent neuromorphic application.

Conference Presentation

Citation Download Citation

Sungsik Lee "Amorphous oxide thin-film devices for neuromorphic applications", Proc. SPIE PC12024, Advances in Display Technologies XII, PC1202407 (9 March 2022); https://doi.org/10.1117/12.2612015

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