Presentation
30 May 2022 Low-phonon rare-earth doped GaGe-based chalcogenide glasses for mid-IR laser gain materials
Ei E. Brown, Zackery Fleischman, Jason McKay, Jazmine Riggins, Uwe Hommerich, Witold Palosz, Sudhir Trivedi, Mark Dubinskii
Author Affiliations +
Abstract
A large number of rare-earth (RE) activated materials have been investigated to develop new solid state infrared (IR) laser sources for potential applications in atmospheric sensing, material processing, laser remote sensing, medicine, and free space communications. RE3+-doped low-phonon chalcogenide glasses have shown efficient mid-IR emission as well as lasing at room temperature. In this work, we report the results of a comparative study of mid-IR spectroscopic properties of RE3+ doped chalcogenide glasses (e.g. GaGeX (X= S, Se)) aimed at exploring their potential for efficient mid-IR laser operation.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ei E. Brown, Zackery Fleischman, Jason McKay, Jazmine Riggins, Uwe Hommerich, Witold Palosz, Sudhir Trivedi, and Mark Dubinskii "Low-phonon rare-earth doped GaGe-based chalcogenide glasses for mid-IR laser gain materials", Proc. SPIE PC12092, Laser Technology for Defense and Security XVII, PC1209202 (30 May 2022); https://doi.org/10.1117/12.2621756
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KEYWORDS
Mid-IR

Chalcogenide glass

Solid state lasers

Oxides

Phonons

Remote sensing

Selenium

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