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HVPE growth of orientation patterned GaAsP (OP-GaAsP) layers with thickness exceeding 600 m and with excellent domain fidelity is accomplished for several arsenic-phosphorus compositions to obtain desired optical properties. This novel ternary material system could be an ideal candidate as compared to those of widely explored QPM materials – GaAs and GaP, for nonlinear frequency conversion in the mid- and long-wave infrared based on some specific pump sources, such as mode-locked Er-fiber lasers. Recent demonstration of second harmonic generation in an OP-GaAs0.15P0.85 structure brings us a step closer to implement such GaAsP QPM structures as frequency conversion devices.
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Shivashankar R. Vangala, Duane Brinegar, Vladimir Tassev, Valentin Petrov, "Orientation patterned GaAsP for nonlinear optical applications," Proc. SPIE PC12405, Nonlinear Frequency Generation and Conversion: Materials and Devices XXII, PC124050M (17 March 2023); https://doi.org/10.1117/12.2650080