GaN nanostructures for photonic applications

Kristine A. Bertness; Matt D. Brubaker; Alexana Roshko

doi:10.1117/12.2650241

17 March 2023 GaN nanostructures for photonic applications

Kristine A. Bertness, Matt D. Brubaker, Alexana Roshko

Proceedings Volume PC12430, Quantum Sensing and Nano Electronics and Photonics XIX; PC1243005 (2023) https://doi.org/10.1117/12.2650241
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

GaN and related materials span one of the largest ranges of band gap energies of any III-V alloy system, from the mid-infrared to deep ultraviolet. In addition, its asymmetric crystal polarity creates regions of negative dielectric constant in the deep infrared. This talk will describe our work in combining this band gap flexibility with precise dimensional and positional control of 3D nanostructures via selective epitaxy in plasma-assisted molecular beam epitaxy. Applications range from microLEDs to optical interconnects to metamaterials.

Conference Presentation

Citation Download Citation

Kristine A. Bertness, Matt D. Brubaker, and Alexana Roshko "GaN nanostructures for photonic applications", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC1243005 (17 March 2023); https://doi.org/10.1117/12.2650241

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