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4 October 2024 Optoelectronic properties of ultrawide-band-gap semiconductors probed by deep-ultraviolet spectroscopy
Ryota Ishii, Mitsuru Funato, Yoichi Kawakami
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Proceedings Volume PC13115, UV and Higher Energy Photonics: From Materials to Applications 2024; PC1311509 (2024) https://doi.org/10.1117/12.3028588
Event: Nanoscience + Engineering, 2024, San Diego, California, United States
Abstract
Ultrawide-band-gap (UWBG) semiconductors have attracted much attention for deep-ultraviolet (DUV) photonics and high-power electronics. However, the physical understanding is in infancy, preventing the potential capacities of UWBG semiconductors to be drawn out. Therefore, the electronic and optical properties should be fully elucidated using such as DUV spectroscopy. Whereupon, another obstacle stands that DUV spectroscopy itself is immature. In the presentation, we therefore talk about the development of DUV scanning near-field optical microscope and the optoelectronic properties of AlN studied by DUV luminescence spectroscopy.
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Ryota Ishii, Mitsuru Funato, and Yoichi Kawakami "Optoelectronic properties of ultrawide-band-gap semiconductors probed by deep-ultraviolet spectroscopy", Proc. SPIE PC13115, UV and Higher Energy Photonics: From Materials to Applications 2024, PC1311509 (4 October 2024); https://doi.org/10.1117/12.3028588
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KEYWORDS
Deep ultraviolet
Spectroscopy
Semiconductors
Optoelectronics
Near field scanning optical microscopy
Excitons
Luminescence
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