InGaAsP Laser Diodes

Gregory H. Olsen

doi:10.1117/12.958688

19 September 1980 InGaAsP Laser Diodes

Gregory H. Olsen

Proceedings Volume 0224, Fiber Optics for Communications and Control; (1980) https://doi.org/10.1117/12.958688
Event: 1980 Technical Symposium East, 1980, Washington, D.C., United States

Abstract

The advantages and properties of InGaAsP laser diodes in the 1.0 - 1.7 μm spectral region are discussed. The structure, growth (both vapor and liquid phase epitaxy) and operating principles of these devices are briefly reviewed. State of the art device results from 1.3 and 1.55 μm devices are then presented. The modal, thermal and reliability properties of these devices, as well as their commercial availability, are also discussed and possible directions for future applications are considered.

Citation Download Citation

Gregory H. Olsen "InGaAsP Laser Diodes", Proc. SPIE 0224, Fiber Optics for Communications and Control, (19 September 1980); https://doi.org/10.1117/12.958688

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