Paper
6 August 1980 Extrinsic Silicon Focal-Plane Technology
Dieter H. Pommerrenig
Author Affiliations +
Proceedings Volume 0225, Infrared Image Sensor Technology; (1980) https://doi.org/10.1117/12.958704
Event: 1980 Technical Symposium East, 1980, Washington, D.C., United States
Abstract
Both monolithic and hybrid silicon focal planes are presently considered for future IR system applications. Significant progress has been made in the development of two-dimensional arrays because the IR detection properties of extrinsic silicon are well developed and the state of the art of manufacturing CCD devices is within the commercial industrial domain. Monolithic focal planes (MFP) combine the function of signal radiation conversion and electronic signal readout and processing in one device, whereas in a hybrid focal plane (HFP), the detection function is physically separated from the charge injection and transfer function; both devices are mechanically interconnected via a metallic bump matrix. The monolithic approaches benefit from the utilization of only one device. The hybrid approaches, on the other hand, benefit from the, ability to optimize and select independently the sensing and processing elements.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dieter H. Pommerrenig "Extrinsic Silicon Focal-Plane Technology", Proc. SPIE 0225, Infrared Image Sensor Technology, (6 August 1980); https://doi.org/10.1117/12.958704
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KEYWORDS
Silicon

Charge-coupled devices

Sensors

Multiplexers

Infrared imaging

Infrared radiation

Infrared sensors

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