Simulation Of Edge Location Error

Steven C. Gustafson; Philip C. Handorf

doi:10.1117/12.931882

28 July 1981 Simulation Of Edge Location Error

Steven C. Gustafson, Philip C. Handorf

Proceedings Volume 0275, Semiconductor Microlithography VI; (1981) https://doi.org/10.1117/12.931882
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

Edge location in very high-resolution images may be affected by the statistical distribution of discrete grains that collectively form the opaque regions. An ideal case is considered in which a one-dimensional edge, represented by a step probability density function, is characterized by the location and contrast (magnitude relative to a background level) of the step discontinuity. This function is randomly sampled at a number of points, and a maximum likelihood criterion and a Monte Carlo technique are used to estimate the edge location from the samples. The root mean square deviation of this estimate from the actual edge location is obtained as a function of the edge contrast, the actual edge location, and the number of samples. This simulation is applicable to a class of single straight-edge images for which the number of samples is interpreted as the number of grains in the image and for which the edge orientation is known. 4-reNAyin -inn

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Steven C. Gustafson and Philip C. Handorf "Simulation Of Edge Location Error", Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); https://doi.org/10.1117/12.931882

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KEYWORDS

Monte Carlo methods

Error analysis

Statistical analysis

Image processing

Edge detection

Electrons

Image acquisition

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