Paper
7 November 1983 X-Ray Lithography Exposures Using Synchrotron Radiation
Jerome P. Silverman, Rolf P. Haelbich, Warren D. Grobman, John M. Warlaumont
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Abstract
A beamline for making X-ray lithography exposures using synchrotron radiation has been built and is now in operation at Brookhaven National Laboratory. The characteristics of synchrotron radiation and the reasons for using such a source are discussed. A description of the beamline and its control system is given, and results of early exposures are presented.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerome P. Silverman, Rolf P. Haelbich, Warren D. Grobman, and John M. Warlaumont "X-Ray Lithography Exposures Using Synchrotron Radiation", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935100
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Semiconducting wafers

Mirrors

Synchrotron radiation

Photomasks

Lithography

Vacuum ultraviolet

Electrons

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