Picosecond Photoconductivity In 3He+ Bombarded Inp

P. M. Downey; B. Schwartz

doi:10.1117/12.966069

28 November 1983 Picosecond Photoconductivity In ³He⁺ Bombarded Inp

P. M. Downey, B. Schwartz

Proceedings Volume 0439, Picosecond Optoelectronics; (1983) https://doi.org/10.1117/12.966069
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

3He+ bombardment is shown to be an effective means of achieving very short free carrier lifetimes in Fe-doped InP. Photoconductivity studies indicate free carrier mobilities (~600 cm²/Vs with carrier relaxation times of 6 psec. Preliminary correlation measurements demonstrate that carrier lifetimes less than 5 psec have been achieved in InP using ³He⁺ bombardment without compromising the dark resistance of the photoconductors. The upper limit to the lifetime is a consequence of using coaxial cables in the correlation circuit.

Citation Download Citation

P. M. Downey and B. Schwartz "Picosecond Photoconductivity In ³He⁺ Bombarded Inp", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966069

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