An Indirect Plasma-Enhanced Chemical Vapor Deposition Technique For Gate Dielectrics

K P. Pande; D. Gutierrez

doi:10.1117/12.941347

31 May 1984 An Indirect Plasma-Enhanced Chemical Vapor Deposition Technique For Gate Dielectrics

K P. Pande, D. Gutierrez

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941347
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

The growth of device quality Al203 dielectric films by an indirect plasma-enhanced CVD technique is described. The films were grown on InP using trimethylaluminum and nitrous oxide reactants in the range of 230-300°C. Direct exposure of substrate to the d.c. generated plasma was minimized by a novel reactor configuration. For optimum deposition conditions, stoichiometric films with indices of refraction between 1.65-1.67 were obtained. InP-M0S capacitors consisting of 1000° thick Al₂0₃ dielectric films and Al-metal field plates showed interface state densities in the range of 3x 10¹¹cm^-2 eV^-1.

Citation Download Citation

K P. Pande and D. Gutierrez "An Indirect Plasma-Enhanced Chemical Vapor Deposition Technique For Gate Dielectrics", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941347

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available