Paper
31 May 1984 The Growth Of Platinum Nickel Silicide By Thermal Anneal Of An Alloy Film On Silicon
Alan E. Morgan, William T. Stacy, Russell C Ellwanger, Yde Tamminga
Author Affiliations +
Abstract
The formation of platinum nickel silicide has been studied by sputter depositing a 600 Å Pt.4Ni.6 alloy layer onto (111) n-type Si and annealing for 20 min. in N2 at tempera-tures between 300 and 750°C. RBS, AES and cross-sectional STEM/EDS were used for character-ization. The ternary silicide develops as a two or three layer structure and only at the higher temperatures does a uniform Pt4Ni.6Si layer result. An interfacial monosilicide layer containing mostly Ni is present throughout the growth sequence. The silicide growth mechanism can be understood in terms of metal atom diffusion with the preferential bonding of Si to Pt leaving Ni to diffuse deeper into the Si substrate.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan E. Morgan, William T. Stacy, Russell C Ellwanger, and Yde Tamminga "The Growth Of Platinum Nickel Silicide By Thermal Anneal Of An Alloy Film On Silicon", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941344
Lens.org Logo
CITATIONS
Cited by 3 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Platinum

Nickel

Silicon

Interfaces

Transmission electron microscopy

Chemical species

Etching

Back to Top