Electron Paramagnetic Resonance Characterization Of Defects In Semiconductors

Eicke R. Weber

doi:10.1117/12.946333

28 June 1985 Electron Paramagnetic Resonance Characterization Of Defects In Semiconductors

Eicke R. Weber

Proceedings Volume 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II; (1985) https://doi.org/10.1117/12.946333
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

Electron Paramagnetic Resonance is a valuable tool for the characterization of defects in semiconductors. After a short introduction into the method, various examples are discussed in detail. These include intrinsic and impurity-related point defects in silicon, transition metals in semiconductors, and antisite defects in III-V compounds.

Citation Download Citation

Eicke R. Weber "Electron Paramagnetic Resonance Characterization Of Defects In Semiconductors", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); https://doi.org/10.1117/12.946333

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