Rapid Thermal Annealing Of Sputtered Niobium Silicide Thin Films

T. P. Chow; D. Hodul; R. A. Powell

doi:10.1117/12.961214

26 June 1986 Rapid Thermal Annealing Of Sputtered Niobium Silicide Thin Films

T. P. Chow, D. Hodul, R. A. Powell

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961214
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Thin film properties of niobium silicide (Si/Nb ~ 2.1) on SiO₂/Si substrates after rapid thermal annealing in two different systems were investigated. The structural and compositional properties were examined with X-ray diffraction and Rutherford backscatter-ing spectrometry. X-ray diffraction revealed that NbSi₂ was the predominant silicide phase present, as the grain size increased from 10 to 160Å before and after annealing at 1100°C for 10 sec. Isochronal and isothermal annealing at 800-1200°C for 10-120 sec showed that over 50% decrease in resistivity occurred in the first 10 sec and the lowest resistivity value of 85μO-cm was obtained after annealing at 1200°C for 120 sec. Also, a corresponding increase in film reflectance was observed with the decrease in sheet resistivity. Furthermore, annealing at 1300°C led to precipitate formation on the silicide surface.

Citation Download Citation

T. P. Chow, D. Hodul, and R. A. Powell "Rapid Thermal Annealing Of Sputtered Niobium Silicide Thin Films", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961214

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