Paper
6 November 1986 Recent Developments on a 128 x 128 Indium Antimonide/FET Switch Hybrid Imager For Low-Background Applications
Gary C. Bailey, Curtiss A. Niblack, James T. Wimmers
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Abstract
By combining high-quality mesa photovoltaic indium antimonide detector material with a silicon x-y FET switch multiplexer, a useful infrared area detector has been developed. This device is intended for low-background applications, where high sensitivity is required. Initial characterization of the detector at 80 K showed a KTC limited read noise of less than 1,000 electrons, good dark current, responsivity uniformity, and a maximum readout rate of 10 MHz. The hybrid mating technology has sufficient precision to allow expansion to a 256 x 256 format. The dark current in the detector material is sufficiently low to allow full-frame integration, even with arrays as large as 256 x 256 elements.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary C. Bailey, Curtiss A. Niblack, and James T. Wimmers "Recent Developments on a 128 x 128 Indium Antimonide/FET Switch Hybrid Imager For Low-Background Applications", Proc. SPIE 0686, Infrared Detectors, Sensors, and Focal Plane Arrays, (6 November 1986); https://doi.org/10.1117/12.936527
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Multiplexers

Sensors

Switches

Indium

Diodes

Field effect transistors

Infrared sensors

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