Growth And Characterization Of CdTe On GaAs/Si Substrates

G Radhakrishnan; A Nouhi; J Liu

doi:10.1117/12.943935

18 May 1988 Growth And Characterization Of CdTe On GaAs/Si Substrates

G Radhakrishnan, A Nouhi, J Liu

Proceedings Volume 0877, Micro-Optoelectronic Materials; (1988) https://doi.org/10.1117/12.943935
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

Epitaxial CdTe has been grown on both (100) GaAs/Si and (111) GaAs/Si substrates. A combination of molecular beam epitaxy and metal organic chemical vapor deposition have been employed to achieve this growth. The GaAs layers are grown on Si substrates by molecular beam epitaxy, followed by the growth of CdTe on GaAs/Si substra by metalorganic chemical vapor deposition. X-ray diffraction, photoluminescence and scanning electron microscopy have been used to characterize the CdTe films.

Citation Download Citation

G Radhakrishnan, A Nouhi, and J Liu "Growth And Characterization Of CdTe On GaAs/Si Substrates", Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); https://doi.org/10.1117/12.943935

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