Monte Carlo Simulations Of Femtosecond Spectroscopy In Semiconductors

Daniel W. Bailey; Christopher J. Stanton; Karl Hess

doi:10.1117/12.947191

22 August 1988 Monte Carlo Simulations Of Femtosecond Spectroscopy In Semiconductors

Daniel W. Bailey, Christopher J. Stanton, Karl Hess

Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947191
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Simulations of electron dynamics in semiconductors during the first half picosecond after optical excitation by a 2-eV laser are reported. Emphasis is given to a comparison between the effects of intervalley phonon scattering, electron-electron scattering and electron-polar optical phonon interactions. The advantages of Monte Carlo simulations for the visualization of the complex processes is stressed.

Citation Download Citation

Daniel W. Bailey, Christopher J. Stanton, and Karl Hess "Monte Carlo Simulations Of Femtosecond Spectroscopy In Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947191

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