Paper
22 August 1988 Nonequilibrium Phonon Dynamics In A Semiconductor Quantum Well
M. Lax, W. Cai, M. C. Marchetti
Author Affiliations +
Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947217
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The description of the dynamics of nonequilibrium phonons in heterolayers, where the carriers are quasi-two-dimensional (2D), while the equilibrium lattice excitations are, to a first approximation, those of the bulk, require a new theoretical approach. We have derived a kinetic equation for the phonon one-body density matrix, and then transform it to a tractable set of equations by introducing a "phonon wavepacket" representation. Our result removes the spurious dependence on the size of the sample that results when the nonequilibrium phonons are represented in terms of decoupled 3D plane waves. Using this approach we have calculated the relaxation and the transport of carriers in both steady state and time dependent processes. The results show the importanc6 of considering the hot phonon effect, which explains the deviation between the recent experiments and previous theoretical calculations.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Lax, W. Cai, and M. C. Marchetti "Nonequilibrium Phonon Dynamics In A Semiconductor Quantum Well", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947217
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KEYWORDS
Phonons

Electrons

Semiconductors

Fourier transforms

Laser beam diagnostics

Quantum wells

Ultrafast lasers

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