Nonequilibrium Phonons And Carrier Cooling In Polar Semiconductors

Walter Potz; M.Cristina Marchetti

doi:10.1117/12.947200

22 August 1988 Nonequilibrium Phonons And Carrier Cooling In Polar Semiconductors

Walter Potz, M.Cristina Marchetti

Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947200
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

We present a theoretical study of optical phonon build-up associated with the ultrafast cooling of highly photo-excited electron-hole plasmas in polar semiconductors. Confining ourselves to the study of high carrier concentrations and subpicosecond laser excitation of bulk GaAs and GaAlAs-GaAs single quantum well structures, we find that rather long optical phonon lifetimes are primarily responsible for the experimental observation of reduced carrier cooling rates. The importance of the carrier-carrier interaction, screening, carrier confinement, and slab modes is discussed.

Citation Download Citation

Walter Potz and M.Cristina Marchetti "Nonequilibrium Phonons And Carrier Cooling In Polar Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947200

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