Quantum Monte Carlo Calculations Of Hot-Electron Relaxation In Semiconductors

Carlo Jacoboni

doi:10.1117/12.947190

22 August 1988 Quantum Monte Carlo Calculations Of Hot-Electron Relaxation In Semiconductors

Carlo Jacoboni

Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947190
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Energy relaxation of hot carriers generated and probed by means of ultrafast laser spectroscopy occurs at very short times. In particular, relevant phenomena seem to occur already in a time interval of the order of 50-100 femtoseconds. Classical transport theory, based on Boltzmann equation, is not adequate for the description of the physical processes that are taking place on this time scale. In the present paper a new Monte Carlo technique, recently developed for the solution of the Liouville equation for quantum transport, is presented and applied to the above problem. The method allows the evaluation of the electronic density matrix as a function of time without any assumptions about the strength and the duration of the phonon collisions and without any arbitrary separation between electron and phonon variables. Results obtained with a simplified model of GaAs show that for times less than or of the order of 0.1 ps energy non-conserving transitions do play a significant role, and the energy relaxation predicted by quantum theory is considerably weaker than that obtained with classical transport theory.

Citation Download Citation

Carlo Jacoboni "Quantum Monte Carlo Calculations Of Hot-Electron Relaxation In Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947190

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