Relaxation And Linebroadening Of Optical Phonons In Crystaline Germanium

A. Z. Genack; L. Ye; C. B. Roxlo

doi:10.1117/12.947206

22 August 1988 Relaxation And Linebroadening Of Optical Phonons In Crystaline Germanium

A. Z. Genack, L. Ye, C. B. Roxlo

Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947206
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

The relaxation rate, 1/τ , of a nonequilibrium population of zone center TO phonons in Ge is obtained by measuring the decay of the intensity of spontaneous anti-Stokes Raman scattering from two picosecond laser pulses as the pulse separation is increased., The relaxation rate 1/τ is the difference between the rate, 1/T1, of the breakup of optical phonons into two or more phonons and the inverse processes which replenish the phonon population. The lifetime contributions to the Raman linewidth, pv is ▵νℓ=1/27πTi. A comparison of the temperature dependence of Δνℓ with Av measured by Menendez and Cardona shows that the line is homogeneously broadened and is the sum of a lifetime and pure dephasing contributions due to scattering of the phonon k vector by isotopic disorder, Δν = Δνℓ +Δvd. The ability to resolve various contributions to the Raman linewidth can clarify the nature of phonon interactions.

Citation Download Citation

A. Z. Genack, L. Ye, and C. B. Roxlo "Relaxation And Linebroadening Of Optical Phonons In Crystaline Germanium", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947206

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