Paper
22 August 1988 Ultrafast Recombination And Photoluminescence Spectra Of Semiconductor Microcrystallites
H. S. Kwok, J. P. Zheng
Author Affiliations +
Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947212
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The photoluminescence spectra of CdSxSe1_x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms can be identified. The dynamic behavior can be qualitatively explained by the competition between (A) tunneling-mediated recombination of deeply trapped charges and (B) direct geminate recombination of excitons and nongeminate radiative recombination of free and shallowly trapped carriers and (C) nonradiative recombination. Large (> 30 nm) blueshifts of both peaks were also observed as the laser intensity increased. Additionally, it was found that both the fluorescence spectrum and the recombination lifetime of these microcrystallites could be modified by laser irradiation. Recombination times faster than 10 ps can be achieved in these materials.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. S. Kwok and J. P. Zheng "Ultrafast Recombination And Photoluminescence Spectra Of Semiconductor Microcrystallites", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947212
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KEYWORDS
Luminescence

Picosecond phenomena

Pulsed laser operation

Microcrystalline materials

Semiconductors

Glasses

Ultrafast phenomena

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