In near future, heteroepitaxy of semiconductor on the insulator will be very important in the field of OEIC, 3D IC, high speed IC and so on. This paper presents a novel hetero-epitaxial growth of GaAs on CaF2 /Si substrate for such applications. First of all, a brief explanation about the features of group IIa fluorides(CaF2, SrF2, BaF2 and their mixed crystals) is made. Then, the experimental procedure and the effectiveness of the electron-beam exposure epitaxy(EBE-epitaxy) are described. It is shown that the EBE-epitaxy is potentially capable of growing a GaAs film having a smooth surface, good crystallinity and single crystallographic orientation. The discussion is also made to clarify the mechanism of the EBE-epitaxy.
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