Submonolayer quantum-dot lasers

Benjamin Lingnau; Kathy Lüdge; Nina Owschimikow

doi:10.1117/12.2252754

22 February 2017 Submonolayer quantum-dot lasers

Benjamin Lingnau, Kathy Lüdge, Nina Owschimikow

Proceedings Volume 10098, Physics and Simulation of Optoelectronic Devices XXV; 1009816 (2017) https://doi.org/10.1117/12.2252754
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Active media based on submonolayer (SML) quantum-dots are a novel gain material that potentially combines the high gain of semiconductor quantum-wells with the ultrafast gain recovery of Stranski-Krastanov quantumdots. By comparison of theory and experiment, we find an ultrafast gain recovery timescale well below one picosecond, along with a high optical gain. We investigate SML lasers theoretically and provide comparisons with conventional quantum-dot devices. We find a substantial increase in small-signal bandwidth and largesignal modulation capability. Our results show that semiconductor submonolayer laser and amplifier devices are promising candidates for high-speed optoelectronics as well as integrated photonics applications.

Citation Download Citation

Benjamin Lingnau, Kathy Lüdge, and Nina Owschimikow "Submonolayer quantum-dot lasers", Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 1009816 (22 February 2017); https://doi.org/10.1117/12.2252754

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