Modeling and analysis of scattering from silicon nanoparticles with high excess carriers for MIR spectroscopy

Ibrahim Shoer; Ahmed Nageeb; Abdelrahman Osman; Hosam I. Mekawey; Yehea Ismail; Mohamed A. Swillam

doi:10.1117/12.2254204

22 February 2017 Modeling and analysis of scattering from silicon nanoparticles with high excess carriers for MIR spectroscopy

Ibrahim Shoer, Ahmed Nageeb, Abdelrahman Osman, Hosam I. Mekawey, Yehea Ismail, Mohamed A. Swillam

Author Affiliations +

Proceedings Volume 10098, Physics and Simulation of Optoelectronic Devices XXV; 100981K (2017) https://doi.org/10.1117/12.2254204
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

In this work a detailed analysis of the scattering cross-section of silicon Nano-particles with high number of excess carriers in the near and Mid Infrared (MIR) is provided. The effect of different radii of the nanoparticles on the resonance peaks is studied using Mie theory and verified using FDTD. The effect of the level of excess carrier generated on the scattering cross section also analyzed. The study reveals many useful characteristics for such particles which behaves as plasmonic particles in the MIR. Using this study, different particles are designed as scatters in the MIR based on specific dimensions and excess carriers level. These particles can be utilized for infrared spectroscopy of different application such as gas and biomedical sensing in the MIR.

Citation Download Citation

Ibrahim Shoer, Ahmed Nageeb, Abdelrahman Osman, Hosam I. Mekawey, Yehea Ismail, and Mohamed A. Swillam "Modeling and analysis of scattering from silicon nanoparticles with high excess carriers for MIR spectroscopy", Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 100981K (22 February 2017); https://doi.org/10.1117/12.2254204

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