Ultra-wide bandgap beta-Ga2O3 for deep-UV solar blind photodetectors (Conference Presentation)

Subrina Rafique; Lu Han; Hongping Zhao

doi:10.1117/12.2252373

19 April 2017 Ultra-wide bandgap beta-Ga₂O₃ for deep-UV solar blind photodetectors(Conference Presentation)

Subrina Rafique, Lu Han, Hongping Zhao

Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101051O (2017) https://doi.org/10.1117/12.2252373
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Deep-ultraviolet (DUV) photodetectors based on wide bandgap (WB) semiconductor materials have attracted strong interest because of their broad applications in military surveillance, fire detection and ozone hole monitoring. Monoclinic β-Ga2O3 with ultra-wide bandgap of ~4.9 eV is a promising candidate for such application because of its high optical transparency in UV and visible wavelength region, and excellent thermal and chemical stability at elevated temperatures. Synthesis of high qualityβ-Ga2O3 thin films is still at its early stage and knowledge on the origins of defects in this material is lacking. The conventional epitaxy methods used to grow β-Ga2O3 thin films such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) still face great challenges such as limited growth rate and relatively high defects levels. In this work, we present the growth of β-Ga2O3 thin films on c-plane (0001) sapphire substrate by our recently developed low pressure chemical vapor deposition (LPCVD) method. The β-Ga2O3 thin films synthesized using high purity metallic gallium and oxygen as the source precursors and argon as carrier gas show controllable N-type doping and high carrier mobility. Metal-semiconductor-metal (MSM) photodetectors (PDs) were fabricated on the as-grown β-Ga2O3 thin films. Au/Ti thin films deposited by e-beam evaporation served as the contact metals. Optimization of the thin film growth conditions and the effects of thermal annealing on the performance of the PDs were investigated. The responsivity of devices under 250 nm UV light irradiation as well as dark light will be characterized and compared.

Conference Presentation

Citation Download Citation

Subrina Rafique, Lu Han, and Hongping Zhao "Ultra-wide bandgap beta-Ga₂O₃ for deep-UV solar blind photodetectors(Conference Presentation)", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051O (19 April 2017); https://doi.org/10.1117/12.2252373

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KEYWORDS

Thin films

Deep ultraviolet

Photodetectors

Thin film growth

Low pressure chemical vapor deposition

Metalorganic chemical vapor deposition

Palladium

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