Paper
24 March 2017 Optimization of stochastic EUV resist models parameters to mitigate line edge roughness
Author Affiliations +
Abstract
The optimization problem of reducing EUV line edge roughness (LER) of a given feature, subject to the tolerance constraints on a CD of this feature at nominal EUV process conditions and several off-nominal conditions, is formulated. A stochastic rigorous Monte-Carlo EUV resist model is employed to solve this stochastic optimization problem. Several options for optimization algorithms, suitable for the solution of the formulated EUV LER optimization problem, are presented and discussed, along with the results of their tests.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John J. Biafore, Azat Latypov, Anindarupa Chunder, Andy Brendler, Todd Bailey, and Harry J. Levinson "Optimization of stochastic EUV resist models parameters to mitigate line edge roughness", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101432B (24 March 2017); https://doi.org/10.1117/12.2258707
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Line edge roughness

Optimization (mathematics)

Extreme ultraviolet

Stochastic processes

Edge roughness

Critical dimension metrology

Photoresist processing

Back to Top