Connected component analysis of review-SEM images for sub-10nm node process verification

Sandip Halder; Philippe Leray; Kaushik Sah; Andrew Cross; Paolo Parisi

doi:10.1117/12.2270492

28 March 2017 Connected component analysis of review-SEM images for sub-10nm node process verification

Sandip Halder, Philippe Leray, Kaushik Sah, Andrew Cross, Paolo Parisi

Proceedings Volume 10145, Metrology, Inspection, and Process Control for Microlithography XXXI; 101451Y (2017) https://doi.org/10.1117/12.2270492
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Analysis of hotspots is becoming more and more critical as we scale from node to node. To define true process windows at sub-14 nm technology nodes, often defect inspections are being included to weed out design weak spots (often referred to as hotspots). Defect inspection sub 28 nm nodes is a two pass process. Defect locations identified by optical inspection tools need to be reviewed by review-SEM’s to understand exactly which feature is failing in the region flagged by the optical tool. The images grabbed by the review-SEM tool are used for classification but rarely for quantification. The goal of this paper is to see if the thousands of review-SEM images which are existing can be used for quantification and further analysis. More specifically we address the SEM quantification problem with connected component analysis.

Citation Download Citation

Sandip Halder, Philippe Leray, Kaushik Sah, Andrew Cross, and Paolo Parisi "Connected component analysis of review-SEM images for sub-10nm node process verification", Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451Y (28 March 2017); https://doi.org/10.1117/12.2270492

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