Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors

Jun Wang; Jin Guo; Feng Xie; Guosheng Wang; Haoran Wu; Man Song; Yuanyuan Yi

doi:10.1117/12.2246472

19 October 2016 Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors

Jun Wang, Jin Guo, Feng Xie, Guosheng Wang, Haoran Wu, Man Song, Yuanyuan Yi

Author Affiliations +

Proceedings Volume 10154, Advanced Optical Design and Manufacturing Technology and Astronomical Telescopes and Instrumentation; 101540N (2016) https://doi.org/10.1117/12.2246472
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China

Abstract

This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.

Citation Download Citation

Jun Wang, Jin Guo, Feng Xie, Guosheng Wang, Haoran Wu, Man Song, and Yuanyuan Yi "Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors", Proc. SPIE 10154, Advanced Optical Design and Manufacturing Technology and Astronomical Telescopes and Instrumentation, 101540N (19 October 2016); https://doi.org/10.1117/12.2246472

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