Paper
11 May 2017 AlGaInN laser diode bars for high-power, optical integration and quantum technologies
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Abstract
GaN laser diodes fabricated from the AlGaInN material system is an emerging technology for high power, optical integration and quantum applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications including displays and imaging systems, free-space and underwater telecommunications and the latest quantum technologies such as optical atomic clocks and atom interferometry.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. P. Najda, P. Perlin, T. Suski, L. Marona, S. Stanczyk, P. Wisniewski, R. Czernecki, D. Schiavon, and M. Leszczyński "AlGaInN laser diode bars for high-power, optical integration and quantum technologies", Proc. SPIE 10238, High-Power, High-Energy, and High-Intensity Laser Technology III, 102380W (11 May 2017); https://doi.org/10.1117/12.2269778
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Cited by 5 scholarly publications.
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KEYWORDS
Semiconductor lasers

Free space optics

High power lasers

Integrated optics

Quantum optics

Imaging systems

Gallium nitride

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