Optoelectronic devices built on bulk GaN substrates

P. Perlin; I. Grzegory; M. Leszczynski; P. Prystawko; R. Czernecki; G. Nowak; P. Wisniewski; L. Dmowski; H. Teisseyre; E. Litwin-Staszewska; T. Suski; M. Bockowski; B. Lucznik; G. Franssen; S. Porowski

doi:10.1117/12.482622

28 August 2002 Optoelectronic devices built on bulk GaN substrates

P. Perlin, I. Grzegory, M. Leszczynski, P. Prystawko, R. Czernecki, G. Nowak, P. Wisniewski, L. Dmowski, H. Teisseyre, E. Litwin-Staszewska, T. Suski, M. Bockowski, B. Lucznik, G. Franssen, S. Porowski

Author Affiliations +

Proceedings Volume 10303, Gallium-Nitride-based Technologies: A Critical Review; 1030306 (2002) https://doi.org/10.1117/12.482622
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

In this paper we discuss the applicability of high-pressure grown bulk GaN crystals as substrates for device oriented MOVPE homoepitaxy. First, we fabricated light emitting diodes as a step towards realization of our target device: a blue light emitting laser diode. Our homoepitaxialy grown LEDs are characterized by excellent electrical characteristics and very satisfactory optical properties. Building on the experience gained during this first stage of our research we have been able to fabricate pulse current operated laser diodes emitting light at a wavelength between 397 and 430 nm. We believe that this fast progress clearly demonstrates the usefulness of bulk GaN substrates for optoelectronic devices, especially for high power laser diodes.

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P. Perlin, I. Grzegory, M. Leszczynski, P. Prystawko, R. Czernecki, G. Nowak, P. Wisniewski, L. Dmowski, H. Teisseyre, E. Litwin-Staszewska, T. Suski, M. Bockowski, B. Lucznik, G. Franssen, and S. Porowski "Optoelectronic devices built on bulk GaN substrates", Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 1030306 (28 August 2002); https://doi.org/10.1117/12.482622

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