Very high aspect ratio through silicon via reflectometry

J. Bauer; F. Heinrich; O. Fursenko; S. Marschmeyer; A. Bluemich; S. Pulwer; P. Steglich; C. Villringer; A. Mai; S. Schrader

doi:10.1117/12.2269957

26 June 2017 Very high aspect ratio through silicon via reflectometry

J. Bauer, F. Heinrich, O. Fursenko, S. Marschmeyer, A. Bluemich, S. Pulwer, P. Steglich, C. Villringer, A. Mai, S. Schrader

Author Affiliations +

Proceedings Volume 10329, Optical Measurement Systems for Industrial Inspection X; 103293J (2017) https://doi.org/10.1117/12.2269957
Event: SPIE Optical Metrology, 2017, Munich, Germany

Abstract

Through Silicon Via (TSV) technology is a key feature of new 3D integration of circuits by creation of interconnections using vias, which go through the silicon wafer. Typically, the highly-selective Bosch Si etch process, characterized by a high etch rate and high aspect ratio and forming of scallops on the sidewalls is used. As presented in this paper, we have developed an experimental setup and a respective evaluation algorithm for the control and monitoring of very high aspect ratio TSV profiles by spectroscopic reflectometry. For this purpose square via arrays with lateral dimension from 3 to 10 μm were fabricated by a Bosch etch process and analyzed by our setup. By exploiting interference and diffraction effects of waves reflected from the top and bottom surfaces as well as from the side walls of the TSV patterns, the measurements provided etch depths, CD values and scallop periods. The results were compared with data obtained by a commercial wafer metrology tool. Aspect ratios of up to 35:1 were safely evaluable by our setup.

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J. Bauer, F. Heinrich, O. Fursenko, S. Marschmeyer, A. Bluemich, S. Pulwer, P. Steglich, C. Villringer, A. Mai, and S. Schrader "Very high aspect ratio through silicon via reflectometry", Proc. SPIE 10329, Optical Measurement Systems for Industrial Inspection X, 103293J (26 June 2017); https://doi.org/10.1117/12.2269957

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