Paper
15 February 2018 Concept of the CW GaN-based VECSEL
Adam K. Sokół, Łukasz Piskorski, Maciej Kuc, Michał Wasiak, Robert P. Sarzała
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Abstract
A concept and numerical study of a continuous-wave (CW) nitride-based vertical-external-cavity surface-emitting laser (VECSEL) with an InGaN/GaN active region is presented. The structure is designed to generate radiation around 450 nm. An array of nitride-based continuous-wave laser diodes is proposed to pump directly the quantum wells in the active region. We expect that it enables CW operation of the presented laser, in contrast to the GaN-based VECSELs demonstrated so far. Moreover, employing in-well pumping instead of barrier pumping reduces pump-laser quantum defect, which contributes to better thermal properties of the device. An external efficiency as high as 26% can be theoretically achieved by using a special multi-pass pump setup.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adam K. Sokół, Łukasz Piskorski, Maciej Kuc, Michał Wasiak, and Robert P. Sarzała "Concept of the CW GaN-based VECSEL", Proc. SPIE 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII, 105150X (15 February 2018); https://doi.org/10.1117/12.2290391
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KEYWORDS
Quantum wells

Continuous wave operation

Semiconductor lasers

Gallium nitride

Disk lasers

Modeling and simulation

Optical pumping

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