Temperature-dependent phosphorous dopant activation in ZnO thin film deposited using plasma immersion ion implantation

Punam Murkute; Hemant Ghadi; Shantanu Saha; Vinayak Chavan; Subhananda Chakrabarti

doi:10.1117/12.2288944

1 March 2018 Temperature-dependent phosphorous dopant activation in ZnO thin film deposited using plasma immersion ion implantation

Punam Murkute, Hemant Ghadi, Shantanu Saha, Vinayak Chavan, Subhananda Chakrabarti

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Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105332K (2018) https://doi.org/10.1117/12.2288944
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

High band gap (3.34 eV) and large exciton binding energy (60 meV) at room temperature facilitates ZnO as a useful candidate for optoelectronics devices. Presence of zinc interstitial and oxygen vacancies results in n-type ZnO film. Phosphorus implantation was carried out using plasma immersion ion implantation technique (2kV, 900W) for constant duration (50 s) on RF sputtered ZnO thin films (Sample A). For dopant activation, sample A was subjected to Rapid Thermal Annealing (RTA) at 700, 800, 900 and 1000°C for 10 s in Oxygen ambient (Sample B, C, D, E). Low temperature (18 K) photoluminescence measurement demonstrated strong donor bound exciton peak for sample A. Dominant donor to acceptor pair peak (DAP) was observed for sample D at around 3.22 eV with linewidth of 131.3 meV. High resolution x-ray diffraction measurement demonstrated (001) and (002) peaks for sample A. (002) peak with high intensity was observed from all annealed samples. Incorporation of phosphorus in ZnO films leads to peak shift towards higher 2θ angle indicate tensile strain in implanted samples. Scanning electron microscopy images reveals improvement in grain size distribution along with reduction of implantation related defects. Raman spectra measured A1(LO) peak at around 576 cm^-1 for sample A. Low intensity E2 (high) peak was observed for sample D indicating formation of (P_Zn+2V_Zn) complexes. From room temperature Hall measurement, sample D measured 1.17 x 10¹⁸ cm ^-3 carrier concentration with low resistivity of 0.464 Ω.

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Punam Murkute, Hemant Ghadi, Shantanu Saha, Vinayak Chavan, and Subhananda Chakrabarti "Temperature-dependent phosphorous dopant activation in ZnO thin film deposited using plasma immersion ion implantation", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105332K (1 March 2018); https://doi.org/10.1117/12.2288944

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KEYWORDS

Zinc oxide

Annealing

Temperature metrology

Zinc

Thin films

Phosphorus

Scanning electron microscopy

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