Oxide hole blocking selective contacts in perovskite solar cells

M. Ulfa; P. Wang; Z. Shao; B. Viana; Th. Pauporté

doi:10.1117/12.2294941

23 February 2018 Oxide hole blocking selective contacts in perovskite solar cells

M. Ulfa, P. Wang, Z. Shao, B. Viana, Th. Pauporté

Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105332R (2018) https://doi.org/10.1117/12.2294941
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

N-type wide bandgap oxide semiconductors are important components of perovskite solar cells (PSCs)). The present paper illustrates the various important key roles of oxides in PSCs. Since the perovskite layer is prepared on the oxide(s) sublayer(s) it has a great influence the absorber properties. For high efficiency, the oxide hole blocking layer must be well-crystallized, thin and well-covering. We show that the best technique to achieve such characteristics and get high efficiency PSSC is the spray pyrolysis. Moreover, the use of a mesoporous oxide layer improves the cell efficiency but using too thick mesoporous layers is detrimental for the cell performances. TiO₂ is the most popular oxide used for selective contact but SnO2 is also an alternative candidate providing good efficiencies. The oxide used must be adjusted to the absorber material properties. This is shown in the case of a silver iodobismuthate absorber (Ag₂Bi₃I₁₁) which works much better when combined with a SnO₂ selective contact compared to a TiO₂ selective contact.

Citation Download Citation

M. Ulfa, P. Wang, Z. Shao, B. Viana, and Th. Pauporté "Oxide hole blocking selective contacts in perovskite solar cells", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105332R (23 February 2018); https://doi.org/10.1117/12.2294941

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