Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

Shuxia Li; N. Garry Tarr; Winnie N. Ye

doi:10.1117/12.2290395

22 February 2018 Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

Shuxia Li, N. Garry Tarr, Winnie N. Ye

Proceedings Volume 10537, Silicon Photonics XIII; 105371M (2018) https://doi.org/10.1117/12.2290395
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Citation Download Citation

Shuxia Li, N. Garry Tarr, and Winnie N. Ye "Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers", Proc. SPIE 10537, Silicon Photonics XIII, 105371M (22 February 2018); https://doi.org/10.1117/12.2290395

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