Presentation + Paper
21 February 2018 Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly
Author Affiliations +
Abstract
The self-assembly of epitaxial quantum dots on (001) surfaces, driven by compressive strain, is a widely used tool in semiconductor optoelectronics. In contrast, the growth of quantum dots on (111) and (110) surfaces has historically been a significant challenge. In most cases the strain relaxes rapidly via dislocation nucleation and glide before quantum dots can form. In this paper, we discuss a method for the reliable and controllable self-assembly of quantum dots on both (111) and (110) surfaces, where tensile strain is now the driving force. By showing that tensile-strained self-assembly is applicable to several material systems, we demonstrate the versatility of this technique. We believe that tensile-strained self-assembly represents a powerful tool for heterogeneous materials integration, and nanomaterial development, with future promise for band engineering and quantum optics applications.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul J. Simmonds "Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly", Proc. SPIE 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 105430L (21 February 2018); https://doi.org/10.1117/12.2299676
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Gallium arsenide

Quantum dots

Nanostructures

Semiconductors

Gallium

Active optics

Photomicroscopy

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