Ammonothermal GaN substrates for microwave electronics and energoelectronics

R. Kucharski; M. Zając; K. Grabiańska; A. Gwardys-Bąk; A. Puchalski; Michal Boćkowski

doi:10.1117/12.2318038

19 April 2018 Ammonothermal GaN substrates for microwave electronics and energoelectronics

R. Kucharski, M. Zając, K. Grabiańska, A. Gwardys-Bąk, A. Puchalski, Michal Boćkowski

Proceedings Volume 10715, 2017 Radioelectronic Systems Conference; 107150M (2018) https://doi.org/10.1117/12.2318038
Event: Radioelectronics Systems Conference, 2017, Jachranka, Poland

Abstract

Gallium Nitride (GaN) substrates gained much interest because of their usefulness in making devices for microwave high power electronics, as well as electronic devices of high operating voltage (above 1000V). Among many techniques of GaN crystallization, ammonothermal method is regarded as a key technology of bulk GaN production. In this method, GaN is deposited on native seeds in supercritical ammonia solution at high pressure (4 kbar) and temperature (600 °C) conditions. Intentional doping allows to obtain crystals of wide spectrum of electric properties (n-type, p-type, highly resistive). In case of the latter ones, compensation of unintentional oxygen donors by shallow and deep acceptors is used. It enables to fabricate 2-inch highly resistive semi-insulating substrates of thermally stable resistivity of at least 10¹¹ Ω cm at room temperature. Those substrates are characterized by outstanding structural quality (flat crystal lattice, dislocation density of 5x10⁴ cm^-2). Semi-insulating substrates were successfully used in fabrication of high electron mobility transistors (HEMT), operating at 22 GHz..

Citation Download Citation

R. Kucharski, M. Zając, K. Grabiańska, A. Gwardys-Bąk, A. Puchalski, and Michal Boćkowski "Ammonothermal GaN substrates for microwave electronics and energoelectronics", Proc. SPIE 10715, 2017 Radioelectronic Systems Conference, 107150M (19 April 2018); https://doi.org/10.1117/12.2318038

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