Resistive-Anode Position-Sensing Photomultiplier Tube Operational Modeling

R F Floryan; C. B. Johnson

doi:10.1117/12.952535

14 April 1989 Resistive-Anode Position-Sensing Photomultiplier Tube Operational Modeling

R F Floryan, C. B. Johnson

Proceedings Volume 1072, Image Intensification; (1989) https://doi.org/10.1117/12.952535
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

It is critically important to bias resistive-anode MCP photomultiplier tubes with the correct potentials in order to achieve optimum resolution. For the ITT version, type #F4146M, of this type of photon-counting imaging detector the optimum bias potentials are as follows: cathode-to-VMCP, 700 V; VMCP-to-ZMCP, -150 V; ZMCP to-anode, 100 V. The potentials applied across the VMCP and ZMCP for optimum gain and resolution are approximately 1800 V and 2100 V, respectively. Investigations of the tube and position computer have been undertaken in an attempt to significantly improve the resolution of the entire camera system. It appears that an improved understanding of the detailed signal flow through the tube will lead to ways to achieve higher resolution in this part of the camera system. Preliminary results of the modeling being used for the tube are presented. Forward and reverse bias conditions between the VMCP and ZMCP produce fundamentally different electron landing patterns on the ZMCP input face. These landing patterns appear to be key ones to study in terms of the possible significant resolution tradeoffs with MCP bias angle, gain, V-ZMCP bias potential, etc. The resolution effects of the cathode-to-VMCP and ZMCP-to-anode proximity focused sections appear to be straightforward: increased electric field strengths and reduced spacings reduce the resolution limiting effects in these sections.

Citation Download Citation

R F Floryan and C. B. Johnson "Resistive-Anode Position-Sensing Photomultiplier Tube Operational Modeling", Proc. SPIE 1072, Image Intensification, (14 April 1989); https://doi.org/10.1117/12.952535

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