Experimental demonstration of Purcell effect in silicon Mie-resonators with embedded Ge(Si) quantum dots (Conference Presentation)

Viktoriia Rutckaia; Joerg Schilling; Vadim Talalaev; Frank Heyroth; Alexey Novikov; Mikhail Shaleev; Mihail Petrov; Isabelle Staude

doi:10.1117/12.2320056

17 September 2018 Experimental demonstration of Purcell effect in silicon Mie-resonators with embedded Ge(Si) quantum dots (Conference Presentation)

Viktoriia Rutckaia, Joerg Schilling, Vadim Talalaev, Frank Heyroth, Alexey Novikov, Mikhail Shaleev, Mihail Petrov, Isabelle Staude

Author Affiliations +

Proceedings Volume 10721, Active Photonic Platforms X; 107211J (2018) https://doi.org/10.1117/12.2320056
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States

Abstract

CMOS-compatible light emitters are intensely investigated for integrated active silicon photonic circuits. One of the approaches to achieve on-chip light emitters is the epitaxial growth of Ge(Si) QDs on silicon. Their broad emission in the 1.3-1.5 um range is attractive for the telecom applications. We investigate optical properties of Ge(Si) QD multilayers, which are grown in a thin Si slab on an SOI wafer, by steady-state and time-resolved micro-photoluminescence. We identify Auger recombination as the governing mechanism of carrier dynamics in such heterostructures. Then we demonstrate the possibility of light manipulation at the nanoscale by resonant nanostructures investigating Si nanodisks with embedded Ge(Si) QDs. We show that the Mie resonances of the disks govern the enhancement of the photoluminescent signal from the embedded QDs due to a good spatial overlap of the emitter position with the electric field of Mie modes. Furthermore, we engineer collective Mie-resonances in a nanodisk trimer resulting in an increased Q-factor and an up to 10-fold enhancement of the luminescent signal due to the excitation of anti-symmetric magnetic and electric dipole modes. Using time-resolved measurements we show that the minima of the radiative lifetime coincide with the positions of the Mie resonances for a large variation of disk sizes confirming the impact of the Purcell effect on QD emission rate. Purcell factors at the different Mie-resonances are determined.

Conference Presentation

Citation Download Citation

Viktoriia Rutckaia, Joerg Schilling, Vadim Talalaev, Frank Heyroth, Alexey Novikov, Mikhail Shaleev, Mihail Petrov, and Isabelle Staude "Experimental demonstration of Purcell effect in silicon Mie-resonators with embedded Ge(Si) quantum dots (Conference Presentation)", Proc. SPIE 10721, Active Photonic Platforms X, 107211J (17 September 2018); https://doi.org/10.1117/12.2320056

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Silicon

Quantum dots

Carrier dynamics

Heterojunctions

Magnetism

Nanostructures

Optical properties

Show All Keywords

Keywords/Phrases

Search In:

Publication Years