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14 September 2018 Terahertz emission from 2D nanomaterials
Kateryna Kushnir, Mengjing Wang, Ying Qin, Guangjiang Li, Sefaattin Tongay, Kristie J. Koski, Lyubov V. Titova
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Proceedings Volume 10756, Terahertz Emitters, Receivers, and Applications IX; 107560S (2018) https://doi.org/10.1117/12.2322160
Event: SPIE Optical Engineering + Applications, 2018, San Diego, California, United States
Abstract
Group-IV monochalcogenides belong to a family of 2D layered materials. Monolayers of group-IV monochalcogenides GeS, GeSe, SnS and SnSe have been theoretically predicted to exhibit a large shift current owing to a spontaneous electric polarization at room temperature. Using THz emission spectroscopy, we find that above band gap photoexcitation with ultrashort laser pulses results in emission of nearly single-cycle THz pulses due to a surface shift current in multi-layer, sub-μm to few- μm thick GeS and GeSe, as inversion symmetry breaking at the crystal surface enables THz emission by the shift current. Experimental demonstration of THz emission by the surface shift current puts this layered group-IV monochalcogenides forward as a candidate for next generation shift current photovoltaics, nonlinear photonic devices and THz sources.
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Kateryna Kushnir, Mengjing Wang, Ying Qin, Guangjiang Li, Sefaattin Tongay, Kristie J. Koski, and Lyubov V. Titova "Terahertz emission from 2D nanomaterials", Proc. SPIE 10756, Terahertz Emitters, Receivers, and Applications IX, 107560S (14 September 2018); https://doi.org/10.1117/12.2322160
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KEYWORDS
Terahertz radiation
Emission spectroscopy
Nanomaterials
Photovoltaics
Terahertz spectroscopy
Ultrafast phenomena
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