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The experiments were aimed at the electrical behavior of the M/O/SiC device at gas concentrations from 0 ppm to 2000 ppm H2 in argon (Ar). The C-V characteristics of the H2 sensor shift to smaller voltages with increasing gas concentration. The bias voltage shift is caused by hydrogen adsorption in metal-oxide and oxide-semiconductor interfaces. The flat band voltage has an important decrease when H2 concentration increases and reaches a -4.05 V shift at 2000 ppm H2 in Ar. These results show that the Pd/SiO2/SiC sensors are suitable for detection of small H2 concentrations (10-200 ppm H2), particularly for detection of H2 leakages. |
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