Optical Thick And Thin Film Metrology On Various Substrates Using A High Resolution Reflection Spectrophotometer

R. Eandi; W. Hunn; M. Eckhardt; H. Engel; H. Becker

doi:10.1117/12.953118

19 July 1989 Optical Thick And Thin Film Metrology On Various Substrates Using A High Resolution Reflection Spectrophotometer

R. Eandi, W. Hunn, M. Eckhardt, H. Engel, H. Becker

Author Affiliations +

Proceedings Volume 1087, Integrated Circuit Metrology, Inspection, and Process Control III; (1989) https://doi.org/10.1117/12.953118
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

Increasing requirements for quality assurance and process control dictate the need for non-contact, non-destructive film thickness measurements in semiconductor manufacturing. Accurate and repeatable film thickness measurements, ranging from <10 nanometers to 50 micrometers can be achieved with a high resolution reflection spectrophotometer on both patterned and un-patterned wafers. Dedicated measurement techniques are required for thin layer research and Integrated Circuit manufacturing (automatic patterned wafer measurements), coatings on optical elements (layers with minimal differences in refractive index), Compact Discs, Liquid Crystal Displays (measurements on transparent substrates), as well as thick layer measurements on polyimide, resists, etc. Correlation of the measured interference intensity spectrum with the spectrum theoretically calculated from the assumed dispersive optical data of the layer materials can be used to investigate the effect of dispersive changes in the refractive and absorption indices on the measured film thickness.

Citation Download Citation

R. Eandi, W. Hunn, M. Eckhardt, H. Engel, and H. Becker "Optical Thick And Thin Film Metrology On Various Substrates Using A High Resolution Reflection Spectrophotometer", Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); https://doi.org/10.1117/12.953118

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