Improvement Of The Transfer-Efficiency Of A Junction CCD By Modifying The Diffusion-Mask Configuration

Antonius J. G. Spiekerman; Gertjan L. Ouwerling

doi:10.1117/12.953163

25 July 1989 Improvement Of The Transfer-Efficiency Of A Junction CCD By Modifying The Diffusion-Mask Configuration

Antonius J. G. Spiekerman, Gertjan L. Ouwerling

Proceedings Volume 1088, Optical/Laser Microlithography II; (1989) https://doi.org/10.1117/12.953163
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

In a Junction Charge-Coupled Device (CCD) electrons can be trapped in parasitic energy wells near the edge of the channel. This results in a low transfer-efficiency. These parasitic energy wells can be diminished by a change of the confinement. This was materialized by simply modifying the shallow p-type diffusion mask. The result was a reduction in the transfer-inefficiency by a factor of ten.

Citation Download Citation

Antonius J. G. Spiekerman and Gertjan L. Ouwerling "Improvement Of The Transfer-Efficiency Of A Junction CCD By Modifying The Diffusion-Mask Configuration", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); https://doi.org/10.1117/12.953163

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