Optimization and Characterization of Single Layer Resist Techniques for 1 Am CMOS Production

Martin P. Karnett; Mary C. Sarnoff

doi:10.1117/12.953160

25 July 1989 Optimization and Characterization of Single Layer Resist Techniques for 1 μm CMOS Production

Martin P. Karnett, Mary C. Sarnoff

Proceedings Volume 1088, Optical/Laser Microlithography II; (1989) https://doi.org/10.1117/12.953160
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

A resist evaluation was performed to select a high resolution positive resist which would meet all the requirements for 1µm CMOS technology. The leading resists in the 1µm evaluation were further evaluated as replacements for an existing production gate imaging process employing CEM. The methodology used in the evaluation will be described with particular emphasis on gate and metal imaging.

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Martin P. Karnett and Mary C. Sarnoff "Optimization and Characterization of Single Layer Resist Techniques for 1 μm CMOS Production", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); https://doi.org/10.1117/12.953160

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