Sub-Half Micron Lithography with Excimer Laser

Yasushi Tanaka; Minoru Takeda; Masao Saito; Takashi Kasuga; Toshiro Tsumori

doi:10.1117/12.953177

25 July 1989 Sub-Half Micron Lithography with Excimer Laser

Yasushi Tanaka, Minoru Takeda, Masao Saito, Takashi Kasuga, Toshiro Tsumori

Proceedings Volume 1088, Optical/Laser Microlithography II; (1989) https://doi.org/10.1117/12.953177
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

The life of optical lithography has been prolonged by introducing Deep UV sources and its limit seems to be in the sub-half-micron to quarter-micron region. In Deep UV lithography, KrF excimer laser lithography is the most promising technique for the next generation. We have evaluated the resolution capability of a KrF excimer laser stepper using a conventional novolac-type resist. With this combination, it has been shown that an alkaline treatment is an effective method of improving the resist profile, which means that a conventional resist is applicable to excimer laser lithography. The mechanism of resist profile improvement is also discussed. We assert that a kind of chemical reaction is caused during the PEB step under certain conditions.

Citation Download Citation

Yasushi Tanaka, Minoru Takeda, Masao Saito, Takashi Kasuga, and Toshiro Tsumori "Sub-Half Micron Lithography with Excimer Laser", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); https://doi.org/10.1117/12.953177

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