Low-temperature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

Kaname Imokawa; Nozomu Tanaka; Akira Suwa; Daisuke Nakamura; Taizoh Sadoh; Tetsuya Goto; Hiroshi Ikenoue

doi:10.1117/12.2509141

4 March 2019 Low-temperature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

Proceedings Volume 10906, Laser-based Micro- and Nanoprocessing XIII; 109060J (2019) https://doi.org/10.1117/12.2509141
Event: SPIE LASE, 2019, San Francisco, California, United States

Abstract

The electrical properties of poly-Si thin films doped using KrF excimer laser irradiation with a phosphoric-acid coating were investigated. After laser doping, the mobility, carrier concentration, activation ratio, and contact resistivity of the poly-Si were found to be 61 cm² /Vs, 1.5×10¹⁸ cm^-3 , 18.1 %, and 8.5 × 10⁻⁵Ω⋅cm² , respectively. Additionally, the operation of a bottom gate transistor fabricated using laser doping was realized and is described herein.

Conference Presentation

Citation Download Citation

Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, and Hiroshi Ikenoue "Low-temperature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication", Proc. SPIE 10906, Laser-based Micro- and Nanoprocessing XIII, 109060J (4 March 2019); https://doi.org/10.1117/12.2509141

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